IPU80R4K5P7AKMA1 Specifications

• Series:CoolMOS™
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):800 V
• Current - Continuous Drain (Id) @ 25°C:1.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:4.5Ohm @ 400mA, 10V
• Vgs(th) (Max) @ Id:3.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs:4 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 500 V
• FET Feature:Super Junction
• Power Dissipation (Max):13W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:PG-TO251-3
• Package / Case:TO-251-3 Short Leads, IPak, TO-251AA