STS6NF20V Specifications

• Series:STripFET™ II
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):1.95V, 4.5V
• Rds On (Max) @ Id, Vgs:40mOhm @ 3A, 4.5V
• Vgs(th) (Max) @ Id:600mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:11.5 nC @ 4.5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):2.5W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-SO
• Package / Case:8-SOIC (0.154", 3.90mm Width)