IMBF170R650M1XTMA1 Specifications

• Series:CoolSiC™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1700 V
• Current - Continuous Drain (Id) @ 25°C:7.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):12V, 15V
• Rds On (Max) @ Id, Vgs:650mOhm @ 1.5A, 15V
• Vgs(th) (Max) @ Id:5.7V @ 1.7mA
• Gate Charge (Qg) (Max) @ Vgs:8 nC @ 12 V
• Vgs (Max):+20V, -10V
• Input Capacitance (Ciss) (Max) @ Vds:422 pF @ 1000 V
• FET Feature:-
• Power Dissipation (Max):88W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:-
• Supplier Device Package:PG-TO263-7
• Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA