NTLTS3107PR2G Specifications

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:5.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:16mOhm @ 8A, 4.5V
• Vgs(th) (Max) @ Id:1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:70 nC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 16 V
• FET Feature:-
• Power Dissipation (Max):800mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-DFN (3x3), (MICRO8 LEADLESS)
• Package / Case:8-VDFN Exposed Pad