IPT65R195G7XTMA1 Specifications

• Series:CoolMOS™ C7
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:195mOhm @ 4.8A, 10V
• Vgs(th) (Max) @ Id:4V @ 240µA
• Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:996 pF @ 400 V
• FET Feature:-
• Power Dissipation (Max):97W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-HSOF-8-2
• Package / Case:8-PowerSFN