SI1022R-T1-GE3 Specifications

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:330mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:1.25Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 4.5 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:30 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):250mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SC-75A
• Package / Case:SC-75A