SI3460BDV-T1-E3 Specifications

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Rds On (Max) @ Id, Vgs:27mOhm @ 5.1A, 4.5V
• Vgs(th) (Max) @ Id:1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:24 nC @ 8 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):2W (Ta), 3.5W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:6-TSOP
• Package / Case:SOT-23-6 Thin, TSOT-23-6