NTMFS0D8N02P1ET1G Specifications

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):25 V
• Current - Continuous Drain (Id) @ 25°C:55A (Ta), 365A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:680µOhm @ 46A, 10V
• Vgs(th) (Max) @ Id:2V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs:52 nC @ 4.5 V
• Vgs (Max):+16V, -12V
• Input Capacitance (Ciss) (Max) @ Vds:8600 pF @ 13 V
• FET Feature:-
• Power Dissipation (Max):3.2W (Ta), 139W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:5-DFN (5x6) (8-SOFL)
• Package / Case:8-PowerTDFN, 5 Leads