NTMFS4H02NFT1G Specifications

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):25 V
• Current - Continuous Drain (Id) @ 25°C:37A (Ta), 193A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:1.4mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id:2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:40.9 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:2.652 pF @ 12 V
• FET Feature:-
• Power Dissipation (Max):3.13W (Ta), 83W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:5-DFN (5x6) (8-SOFL)
• Package / Case:8-PowerTDFN