SI8819EDB-T2-E1 Specifications

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):12 V
• Current - Continuous Drain (Id) @ 25°C:2.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.5V, 3.7V
• Rds On (Max) @ Id, Vgs:80mOhm @ 1.5A, 3.7V
• Vgs(th) (Max) @ Id:900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:17 nC @ 8 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 6 V
• FET Feature:-
• Power Dissipation (Max):900mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:4-MICRO FOOT® (0.8x0.8)
• Package / Case:4-XFBGA