SIHB25N50E-GE3 Specifications

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):500 V
• Current - Continuous Drain (Id) @ 25°C:26A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:145mOhm @ 12A, 10V
• Vgs(th) (Max) @ Id:4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:1980 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):250W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-263 (D²Pak)
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB