CSD25211W1015 Specifications

• Series:NexFET™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:33mOhm @ 1.5A, 4.5V
• Vgs(th) (Max) @ Id:1.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:4.1 nC @ 4.5 V
• Vgs (Max):-6V
• Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):1W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:6-DSBGA (1x1.5)
• Package / Case:6-UFBGA, DSBGA