SIE810DF-T1-GE3 Specifications

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
• Rds On (Max) @ Id, Vgs:1.4mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id:2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:13000 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):5.2W (Ta), 125W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:10-PolarPAK® (L)
• Package / Case:10-PolarPAK® (L)