SI8425DB-T1-E1 Specifications

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:5.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Rds On (Max) @ Id, Vgs:23mOhm @ 2A, 4.5V
• Vgs(th) (Max) @ Id:900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
• Vgs (Max):±10V
• Input Capacitance (Ciss) (Max) @ Vds:2800 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):1.1W (Ta), 2.7W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:4-WLCSP (1.6x1.6)
• Package / Case:4-UFBGA, WLCSP