IRF7779L2TRPBF Specifications

• Series:HEXFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):150 V
• Current - Continuous Drain (Id) @ 25°C:375A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:11mOhm @ 40A, 10V
• Vgs(th) (Max) @ Id:5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:6660 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):3.3W (Ta), 125W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DIRECTFET L8
• Package / Case:DirectFET™ Isometric L8