IPD80R1K4P7ATMA1 Specifications

• Series:CoolMOS™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):800 V
• Current - Continuous Drain (Id) @ 25°C:4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:1.4Ohm @ 1.4A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 700µA
• Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 500 V
• FET Feature:Super Junction
• Power Dissipation (Max):32W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-252
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63