BSS806NEH6327XTSA1 Specifications

• Series:Automotive, AEC-Q101, HEXFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 2.5V
• Rds On (Max) @ Id, Vgs:57mOhm @ 2.3A, 2.5V
• Vgs(th) (Max) @ Id:0.75V @ 11µA
• Gate Charge (Qg) (Max) @ Vgs:1.7 nC @ 2.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:529 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):500mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SOT-23-3
• Package / Case:TO-236-3, SC-59, SOT-23-3