SIHH21N65E-T1-GE3 Specifications

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:20.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:170mOhm @ 11A, 10V
• Vgs(th) (Max) @ Id:4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:99 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:2404 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):156W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PowerPAK® 8 x 8
• Package / Case:8-PowerTDFN