FCP11N60N

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Manufacturer Part
FCP11N60N
Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 600V 10.8A TO220-3
Category
Discrete Semiconductor Products
Family
Transistors - FETs, MOSFETs - Single
Series
-
In Stock
495
Datasheets
-

FCP11N60N Specifications

  • Series:SupreMOS™
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:10.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:299mOhm @ 5.4A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:35.6 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1505 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):94W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3
  • Package / Case:TO-220-3

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