IPAN70R600P7SXKSA1 Specifications

• Series:CoolMOS™ P7
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):700 V
• Current - Continuous Drain (Id) @ 25°C:8.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:600mOhm @ 1.8A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
• Vgs (Max):±16V
• Input Capacitance (Ciss) (Max) @ Vds:364 pF @ 400 V
• FET Feature:-
• Power Dissipation (Max):24.9W (Tc)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:PG-TO220 Full Pack
• Package / Case:TO-220-3 Full Pack