BSB056N10NN3GXUMA1 Specifications

• Series:OptiMOS™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:9A (Ta), 83A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):6V, 10V
• Rds On (Max) @ Id, Vgs:5.6mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs:74 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:5500 pF @ 50 V
• FET Feature:-
• Power Dissipation (Max):2.8W (Ta), 78W (Tc)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:MG-WDSON-2, CanPAK M™
• Package / Case:3-WDSON