DMN30H4D0LFDE-7 Specifications

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):300 V
• Current - Continuous Drain (Id) @ 25°C:550mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.7V, 10V
• Rds On (Max) @ Id, Vgs:4Ohm @ 300mA, 10V
• Vgs(th) (Max) @ Id:2.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:7.6 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:187.3 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):630mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:U-DFN2020-6 (Type E)
• Package / Case:6-PowerUDFN