IXFT18N100Q3 Specifications

• Series:HiPerFET™
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):1000 V
• Current - Continuous Drain (Id) @ 25°C:18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:660mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id:6.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:4890 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):830W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-268
• Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA