STQ2LN60K3-AP Specifications

• Series:SuperMESH3™
• Package:Cut Tape (CT)Tape & Box (TB)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:600mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:4.5Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id:4.5V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:235 pF @ 50 V
• FET Feature:-
• Power Dissipation (Max):2.5W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-92-3
• Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)