SSM3J168F,LF Specifications

• Series:U-MOSVI
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:400mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4V, 10V
• Rds On (Max) @ Id, Vgs:1.9Ohm @ 100mA, 4.5V
• Vgs(th) (Max) @ Id:2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:3 nC @ 10 V
• Vgs (Max):+20V, -16V
• Input Capacitance (Ciss) (Max) @ Vds:82 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):1.2W (Ta)
• Operating Temperature:150°C
• Mounting Type:Surface Mount
• Supplier Device Package:S-Mini
• Package / Case:TO-236-3, SC-59, SOT-23-3