STQ2HNK60ZR-AP Specifications

• Series:SuperMESH™
• Package:Cut Tape (CT)Tape & Box (TB)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:500mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:4.8Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id:4.5V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):3W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-92-3
• Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)