PSMN1R2-25YL,115 Specifications

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):25 V
• Current - Continuous Drain (Id) @ 25°C:100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:1.2mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id:2.15V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:105 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:6380 pF @ 12 V
• FET Feature:-
• Power Dissipation (Max):121W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:LFPAK56, Power-SO8
• Package / Case:SOT-1023, 4-LFPAK