IXTT10N100D2 Specifications

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):1000 V
• Current - Continuous Drain (Id) @ 25°C:10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:1.5Ohm @ 5A, 10V
• Vgs(th) (Max) @ Id:-
• Gate Charge (Qg) (Max) @ Vgs:200 nC @ 5 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:5320 pF @ 25 V
• FET Feature:Depletion Mode
• Power Dissipation (Max):695W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-268
• Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA