EPC2012C Specifications

• Series:eGaN®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss):200 V
• Current - Continuous Drain (Id) @ 25°C:5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):5V
• Rds On (Max) @ Id, Vgs:100mOhm @ 3A, 5V
• Vgs(th) (Max) @ Id:2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:1.3 nC @ 5 V
• Vgs (Max):+6V, -4V
• Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):-
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:Die Outline (4-Solder Bar)
• Package / Case:Die