STL18NM60N Specifications

• Series:MDmesh™ II
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Not For New Designs
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:2.1A (Ta), 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:310mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id:4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 50 V
• FET Feature:-
• Power Dissipation (Max):3W (Ta), 110W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PowerFlat™ (8x8) HV
• Package / Case:8-PowerVDFN