SSM5H08TU,LF Specifications

• Series:U-MOSIII
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4V
• Rds On (Max) @ Id, Vgs:160mOhm @ 750mA, 4V
• Vgs(th) (Max) @ Id:1.1V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:125 pF @ 10 V
• FET Feature:Schottky Diode (Isolated)
• Power Dissipation (Max):500mW (Ta)
• Operating Temperature:150°C
• Mounting Type:Surface Mount
• Supplier Device Package:UFV
• Package / Case:6-SMD (5 Leads), Flat Lead