NGTB75N65FL2WAG

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Manufacturer Part
NGTB75N65FL2WAG
Manufacturer
Rochester Electronics
Description
INSULATED GATE BIPOLAR TRANSISTO
Category
Discrete Semiconductor Products
Family
Transistors - IGBTs - Single
Series
-
In Stock
38
Datasheets
-

NGTB75N65FL2WAG Specifications

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • IGBT Type:Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):200 A
  • Current - Collector Pulsed (Icm):200 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 75A
  • Power - Max:536 W
  • Switching Energy:610µJ (on), 1.2mJ (off)
  • Input Type:Standard
  • Gate Charge:310 nC
  • Td (on/off) @ 25°C:23ns/157ns
  • Test Condition:400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr):90 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-4
  • Supplier Device Package:TO-247-4L

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