SIZ200DT-T1-GE3 Specifications

• Series:TrenchFET® Gen IV
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
• Rds On (Max) @ Id, Vgs:5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:28nC @ 10V, 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:1510pF @ 15V, 1600pF @ 15V
• Power - Max:4.3W (Ta), 33W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-PowerWDFN
• Supplier Device Package:8-PowerPair® (3.3x3.3)