FJV3111RMTF

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Manufacturer Part
FJV3111RMTF
Manufacturer
Rochester Electronics
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - Single, Pre-Biased
Series
-
In Stock
6000
Datasheets
-

FJV3111RMTF Specifications

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)

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