PSMN1R9-40YSDX Specifications

• Series:TrenchMOS™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:200A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:1.9mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id:3.6V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:6198 pF @ 20 V
• FET Feature:Schottky Diode (Body)
• Power Dissipation (Max):194W (Ta)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:LFPAK56, Power-SO8
• Package / Case:SC-100, SOT-669