AONR34332C Specifications

• Series:AlphaMOS
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:48A (Ta), 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
• Rds On (Max) @ Id, Vgs:1.8mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id:1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:105 nC @ 10 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:4175 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):6.2W (Ta), 83.3W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-DFN-EP (3.3x3.3)
• Package / Case:8-PowerWDFN