RM1A5N30S3AE Specifications

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:1.5A (Ta), 1.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:144mOhm @ 1A, 4.5V
• Vgs(th) (Max) @ Id:1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±10V
• Input Capacitance (Ciss) (Max) @ Vds:105 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):400mW (Ta), 500mW (Tc)
• Operating Temperature:-50°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SOT-323
• Package / Case:SC-70, SOT-323