JAN1N5807US

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Manufacturer Part
JAN1N5807US
Manufacturer
Roving Networks / Microchip Technology
Description
DIODE GEN PURP 50V 6A B-MELF
Category
Discrete Semiconductor Products
Family
Diodes - Rectifiers - Single
Series
-
In Stock
0
Datasheets
-

JAN1N5807US Specifications

  • Series:Military, MIL-PRF-19500/477
  • Package:Bulk
  • Part Status:Active
  • Diode Type:Standard
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io):6A
  • Voltage - Forward (Vf) (Max) @ If:875 mV @ 4 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):30 ns
  • Current - Reverse Leakage @ Vr:5 µA @ 50 V
  • Capacitance @ Vr, F:60pF @ 10V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:SQ-MELF, B
  • Supplier Device Package:B, SQ-MELF
  • Operating Temperature - Junction:-65°C ~ 175°C

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Products Category

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