SIZF918DT-T1-GE3 Specifications

• Series:TrenchFET® Gen IV
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:2 N-Channel (Dual), Schottky
• FET Feature:Standard
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)
• Rds On (Max) @ Id, Vgs:4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:2.4V @ 250µA, 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:22nC, 56nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:1060pF, 2650pF @ 15V
• Power - Max:3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-PowerWDFN
• Supplier Device Package:8-PowerPair® (6x5)