SCT4026DW7HRTL Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss):750 V
• Current - Continuous Drain (Id) @ 25°C:51A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):18V
• Rds On (Max) @ Id, Vgs:34mOhm @ 29A, 18V
• Vgs(th) (Max) @ Id:4.8V @ 15.4mA
• Gate Charge (Qg) (Max) @ Vgs:94 nC @ 18 V
• Vgs (Max):+21V, -4V
• Input Capacitance (Ciss) (Max) @ Vds:2320 pF @ 500 V
• FET Feature:-
• Power Dissipation (Max):150W
• Operating Temperature:175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-263-7L
• Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA