DMJ65H430SCTI Specifications

• 55b18700f05822c99215921d3c8583b7:Last Time Buy
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:430mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id:5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:24.5 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:775 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):2.5W (Ta), 50W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:ITO220AB-N (Type HE)
• Package / Case:TO-220-3 Full Pack, Isolated Tab