DMTH10H2M5STLWQ-13 Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:215A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:2.5mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id:4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:124.4 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:8450 pF @ 50 V
• FET Feature:-
• Power Dissipation (Max):5.8W (Ta), 230.8W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SOT-363
• Package / Case:6-TSSOP, SC-88, SOT-363