2SK3812-ZP-E1-AZ Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:110A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:2.8mOhm @ 55A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:250 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:16800 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):1.5W (Ta), 213W (Tc)
• Operating Temperature:150°C
• Mounting Type:Surface Mount
• Supplier Device Package:TO-263-3
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB