UPA2730TP-E2-AZ Specifications

• 55b18700f05822c99215921d3c8583b7:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:20A (Ta), 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4V, 10V
• Rds On (Max) @ Id, Vgs:7mOhm @ 7.5A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:97 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:4670 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):3W (Ta), 40W (Tc)
• Operating Temperature:150°C
• Mounting Type:Surface Mount
• Supplier Device Package:8-HSOP
• Package / Case:8-PowerSOIC (0.173", 4.40mm Width)