DMP1011LFVQ-7 Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):12 V
• Current - Continuous Drain (Id) @ 25°C:13A (Ta), 19A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:11.7mOhm @ 12A, 4.5V
• Vgs(th) (Max) @ Id:1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:9.5 nC @ 6 V
• Vgs (Max):-6V
• Input Capacitance (Ciss) (Max) @ Vds:913 pF @ 6 V
• FET Feature:-
• Power Dissipation (Max):1.05W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount, Wettable Flank
• Supplier Device Package:PowerDI3333-8 (SWP) Type UX
• Package / Case:8-PowerVDFN