MSC090SMA070SA Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):700 V
• Current - Continuous Drain (Id) @ 25°C:25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):20V
• Rds On (Max) @ Id, Vgs:115mOhm @ 15A, 20V
• Vgs(th) (Max) @ Id:2.4V @ 750µA
• Gate Charge (Qg) (Max) @ Vgs:38 nC @ 20 V
• Vgs (Max):+23V, -10V
• Input Capacitance (Ciss) (Max) @ Vds:785 pF @ 700 V
• FET Feature:-
• Power Dissipation (Max):91W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-268
• Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA