BUK9E1R8-40E,127 Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):5V, 10V
• Rds On (Max) @ Id, Vgs:1.7mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id:2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:120 nC @ 5 V
• Vgs (Max):±10V
• Input Capacitance (Ciss) (Max) @ Vds:16400 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):349W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:I2PAK
• Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA