NTMFS4D8N02HT1G Specifications

• 55b18700f05822c99215921d3c8583b7:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):25 V
• Current - Continuous Drain (Id) @ 25°C:21A (Ta), 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:4.2mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id:2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:13.4 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:780 pF @ 12 V
• FET Feature:-
• Power Dissipation (Max):3.2W (Ta), 41W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:5-DFN (5x6) (8-SOFL)
• Package / Case:8-PowerTDFN, 5 Leads