CTLM8110-M832D TR Specifications

• 55b18700f05822c99215921d3c8583b7:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:860mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Rds On (Max) @ Id, Vgs:240mOhm @ 200mA, 1.8V
• Vgs(th) (Max) @ Id:1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:3.56 nC @ 4.5 V
• Vgs (Max):8V
• Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 16 V
• FET Feature:Schottky Diode (Isolated)
• Power Dissipation (Max):1.65W (Ta)
• Operating Temperature:-65°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TLM832D
• Package / Case:8-TDFN Exposed Pad