MIW50N65F-BP

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Manufacturer Part
MIW50N65F-BP
Manufacturer
Micro Commercial Components (MCC)
Description
IGBT 650V 40A TO-247
Category
Discrete Semiconductor Products
Family
Transistors - IGBTs - Single
Series
-
In Stock
22519
Datasheets
-

MIW50N65F-BP Specifications

  • 55b18700f05822c99215921d3c8583b7:Active
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):85 A
  • Current - Collector Pulsed (Icm):200 A
  • Vce(on) (Max) @ Vge, Ic:1.95V @ 15V, 50A
  • Power - Max:326 W
  • Switching Energy:1.27mJ (on), 650µJ (off)
  • Input Type:Standard
  • Gate Charge:450 nC
  • Td (on/off) @ 25°C:55ns/319ns
  • Test Condition:300V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AB

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